AlN heaters, Al₂O₃ susceptors, Si₃N₄ wafer-handling fixtures, and high-purity ceramic components for CVD/PVD chambers, lithography stages, and wafer-chuck temperature control. Zero particle generation, ultra-high purity, and tight dimensional tolerance required.
AlN (aluminum nitride) ceramic heaters deliver the highest thermal conductivity of any ceramic — ensuring fast, uniform wafer heating across the entire chuck surface. Critical for deposition uniformity in CVD, PECVD, and ALD processes.
High-purity Al₂O₃ susceptors and wafer carriers for CVD epitaxial growth reactors. Zero metallic contamination, stable at 1200°C, and dimensionally consistent batch-to-batch for process repeatability.
AlN ceramic substrates for power module and RF device packaging. Thermal conductivity 170 W/m·K — 8× higher than Al₂O₃ — enabling compact, high-power-density package designs with superior thermal dissipation.
Ultra-high-purity Al₂O₃ process tubes, rings, and boats for diffusion furnaces, oxidation furnaces, and ion implant equipment. Purity ≥99.99% minimises metallic contamination of silicon wafers.
Silicon nitride wafer end-effectors, paddles, and transfer arms for FOUP-to-chamber wafer handling. Non-magnetic, non-particle-generating, and dimensionally stable through thermal cycling.
Al₂O₃ and Y₂O₃-stabilised ZrO₂ focus rings, edge rings, and chamber liners for plasma etch reactors. High resistance to fluorine and chlorine plasma chemistries — longer replacement intervals reduce cost-of-ownership.
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