Aluminum nitride delivers thermal conductivity 170 W/m·K (nearly 6× alumina) while remaining an electrical insulator. That rare combination makes AlN the substrate of choice for power semiconductor modules, wafer-processing heaters, and laser diode submounts — anywhere heat must move out and electricity must stay in.
Properties below are typical for our standard, high-thermal-conductivity, and metallized AlN grades. Standard grade serves most heater and substrate applications; high-K grade for power-density-critical electronics.
| Property | Unit | Standard | High-K | Metallized DBC |
|---|---|---|---|---|
| Density | g/cm³ | 3.26 | 3.30 | 3.26 + Cu |
| Thermal Conductivity | W/m·K | 170 | 200 | 170 |
| Thermal Expansion (RT–400°C) | ×10⁻⁶/K | 4.5 | 4.5 | 4.5 |
| Dielectric Strength | kV/mm | 14 | 15 | 14 |
| Volume Resistivity (20°C) | Ω·cm | 10¹⁴ | 10¹⁵ | 10¹⁴ |
| Dielectric Constant (1 MHz) | — | 8.8 | 8.7 | 8.8 |
| Hardness (HV) | Vickers | 1100 | 1100 | 1100 |
| Flexural Strength | MPa | 320 | 360 | 320 |
| Max Service Temp (inert) | °C | 2200 | 2200 | 2200 |
| Surface Finish (as-fired) | Ra μm | 0.4 | 0.4 | 0.05 |
AlN typically ships in one of three finished forms — bare ceramic substrate for downstream metallization, direct-bonded-copper (DBC) substrate for power module assembly, or finished heaters with integrated heating elements.
AlN substrates as 0.25/0.38/0.63/1.0 mm thick discs or rectangles. Bare ceramic for downstream customer processing, or pre-metallized as DBC (Direct-Bonded Copper) and DBA (Direct-Bonded Aluminum) for IGBT and SiC power modules.
AlN heaters with integrated tungsten or molybdenum heating elements for semiconductor wafer chucks. Used in PVD, CVD, ALD, and etch chamber wafer handling. Temperature uniformity ±1% across 200/300 mm wafer.
Small-format AlN substrates (typically 0.5–5 mm square) with gold/silver metallization for high-power laser diode submounts, high-frequency RF packages, and high-brightness LED thermal management.
AlN ships into six application categories. Common thread: heat must move out of a power-dense device while electrical isolation is maintained.
DBC/DBA-metallized AlN substrates as the thermal interface between IGBT/SiC power dies and water-cooled baseplates. The default substrate for EV traction inverters and industrial motor drives above 500V.
AlN heaters with embedded W or Mo heating elements for wafer process equipment. Better temperature uniformity and chemical compatibility than metal-based heaters in plasma and corrosive-gas environments.
AlN submounts beneath high-power laser diode bars (industrial cutting/welding lasers, fiber laser pump diodes). High thermal conductivity prevents wavelength drift from local heating.
AlN packages and substrates for high-power RF amplifiers, 5G base station components, and radar transmit/receive modules. Low dielectric loss + high thermal conductivity = compact high-power RF designs.
DBC-AlN as the substrate beneath SiC MOSFET modules in electric vehicle traction inverters. Replaces older Al₂O₃-DBC at higher voltage and thermal density levels.
AlN crucibles and thermocouple sheaths for molten aluminum and gallium handling. AlN doesn't wet to molten Al — non-stick characteristic enables clean ladle and crucible service.
AlN is the only ceramic that pairs high thermal conductivity with electrical insulation. Pick it when both matter — otherwise alumina (cheaper) or BeO (toxic) might serve.
An Asian Tier-1 EV inverter OEM was bumping into thermal limits on their 800V SiC MOSFET traction inverter design — DBC-Al₂O₃ substrates couldn't move heat out fast enough at peak torque demand. Switching to DBC-AlN substrates raised power density 45% in the same chassis volume, enabling them to hit the OEM's continuous-torque spec.
Direct answers from our application team. Email engineering@ceramitell.com with your power-module spec or substrate drawing.